WPM2045

WPM2045 Integrated P-Channel Power MOSFET (-20V, -2.8A) and Schottky Diode VDS (V) -20 VR(V) 20 MOSFET Typical Rdson (Ω) 0.093@ VGS=-4.5V 0.122@ VGS=-2.5V 0.160@ VGS=-1.8V Schottky Typical VF (V) 0.4@0.5A WPM2045 Http://www.sh-willsemi.com SOT-23-6L Descriptions The WPM2045 is the P-Channel enhancement MOS Field Effect Transistor and Schottky Diode as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product WPM2045 is Pb-free. ASG 654 123 K D N/C Features  Small package SOT-23-6L  Featuring a MOSFET and Schottky Diode  Independent Pin out to each Device to Ease Circuit Design  Ultra Low VF Schottky Diode Applications  Li--Ion Battery Charging  High Side DC-DC Conversion Circuits  High Side Drive for Small Brushless DC Motors  Power Management in Portable, Battery Powered Products Pin configuration (Top View) 65 4 WLSI JYWW 12 3 WLSI= Willsemi J = Device Code YWW= Date Code Marking Order Information Device WPM2045-6/TR Package SOT-23-6L Shipping 3000/Tape&Reel Will Semiconductor Ltd. 1 Aug, 2013 - Rev.1.0 Absolute Maximum Ratings (P-Channel ,TA=25oC unless otherwise noted) WPM2045 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current bd Maximum Power Dissipation bd Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperatur...