WPM2009D

WPM2009D -20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high power charging circuit of mobile phone application. It also can be used in a high power switching application. WPM2009D Http://www.willsemi.com Bottom DFN3x3-8L Bottom Features z Max Rds(on) 42mŸ @ Vgs=-4.5V z Max Vds -20V z Max Current -4.0A z Typical Vgs(th) -0.65V @ Id=-250uA z Power Dissipation 2.0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free Applications z Battery charging z Load Switch z Power Switch z DC-DC converter Pin Connection Top WPM2009 = Part Number YY = Year WW = Week Marking Order Information Device Package Shipping WPM2009D-8/TR DFN3x3-8L 3000/Tape&Reel Will Semiconductor Ltd. 1 Jan,2012 - Rev. 1.4 Maximum Ratings (TA=25oC unless otherwise noted) Symbol Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage
Drain Current – Continue Note1 Drain Current – Continue (t<5s) Note1 ID Drain Current – Continue Note2 Drain Current – Pulsed (t<300us, Duty<2%) Note2 Power Dissipation – Note1 PD Power Dissipation – (t<5s) Note1 Power Dissipation – Note2 TJ Operation junction temperature range TSG Storage temperature range WPM2009D Ratings -20 Œ12 -4.0 -4.9 -6.5 -24 1.0 1.5 2.0 150 -55~150 Unit V V A A ...