WPM2006

WPM2006 Power MOSFET and Schottky Diode WPM2006 Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky DFN2*2 -6L Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted) Parameter DrainŦtoŦSource Voltage GateŦtoŦSource Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State TA = 25°C TA = 85°C TA = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Symbol VDSS VGS ID PD ID PD IDM TJ, TSTG Source Current (Body Diode) (Note 2) IS Value Ŧ20 ±8.0 Ŧ3 Ŧ2.3 Ŧ4.1 1.45 2.3 Ŧ2.0 Ŧ1.5 0.7 Ŧ20 Ŧ55 to 150 Ŧ2 Unit V V A W A W A °C A 1. Surface Mounted on FR4 Board using 1 in sq pad size, 2 oz Cu. 2. Surface Mounted on FR4 Board using minimum pad size, 2 oz Cu. 1 Pin connections: A1 N/C 2 D3 K 6K 5G D 4S Marking: WLSI JYWW SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted) Parameter Symbol Limits Unit Peak repetitive reverse voltage . DC Blocking voltage VRRM VR 20 20 V V J = Specific Device Code YWW = Date Code Average rectified forward current IF 1 A Order information PartN umbe...