WPM2005
WPM2005 Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinou...
WPM2005
WPM2005 Power MOSFET and
Schottky Diode
Features
z Featuring a MOSFET and
Schottky Diode z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF
Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
DrainïtoïSource Voltage
GateïtoïSource Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
t≤5s
Steady State
t≤5s
TJ = 25°C TJ = 85°C TJ = 25°C
TJ = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Symbol VDS VGS ID
PD
IDM TJ, TSTG
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS TL
Value ï20 ±8.0 ï2.9 ï1.8 ï3.7 1.4
2.2 ï13 ï55 to 150 1.7 260
Units V V A
W
A °C A °C
DFN3×2-8L
D 1
C
8
pin connections:
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
Marking:
JA
1. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted)
Parameter
Symbol
Limits
Unit
J = Specific Device Code A = Date Code
Peak repetitive reverse voltage .
DC Blocking voltage
Average rectified forward current
Order information
PartNumber WPM2005Ͳ8/TR
VRRM VR IF
20 20 1
Package DFN3*2- 8L
V V A
Shipping 3000Tape&Reel
http://www.willsemi.com
Page 1
12/8/2009 Rev3.3
WPM2005
THE...
