K4181

Ordering number : ENA0999 2SK4181 SANYO Semiconductors DATA SHEET 2SK4181 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. For use of lighting & etc. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*1) 525 V ±30 V 7.5 A 30 A 70 W 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single pulse) *2 EAS Avalanche Current *3 IAV *1 SANYO’s condition is radiation from backside. 34 mJ 7.5 A The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=99V, L=1mH, IAV=7.5A *3 L≤1mH, single pulse Marking : K4181 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical eq...