DatasheetsPDF.com

IXTJ36N20

IXYS

N-Channel MOSFET

ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 = 36 A RDS(on) = 70 ...


IXYS

IXTJ36N20

File Download Download IXTJ36N20 Datasheet


Description
ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 = 36 A RDS(on) = 70 mΩ trr < 200 ns Symbol Test Conditions VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 200 V 200 V ±20 V ±30 V 36 A 144 A 36 A 19 mJ 5 V/ns 300 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 5g 300 ° C Symbol V DSS VGS(th) IGSS I DSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 18A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 200 2 V 4V ±100 nA 25 µA 250 µA 70 mΩ G D S é (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings H...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)