N-Channel MOSFET
ADVANCE TECHNICAL INFORMATION
HiPerFETTM
N-Channel Enhancement Mode
IXTJ 36N20
VDSS = 200 V ID25 = 36 A RDS(on) = 70 ...
Description
ADVANCE TECHNICAL INFORMATION
HiPerFETTM
N-Channel Enhancement Mode
IXTJ 36N20
VDSS = 200 V ID25 = 36 A RDS(on) = 70 mΩ
trr < 200 ns
Symbol
Test Conditions
VDSS VDGR VGS V
GSM
ID25 IDM IAR EAR dv/dt
P D
TJ TJM Tstg Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V 200 V ±20 V ±30 V
36 A 144 A
36 A 19 mJ
5 V/ns
300 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
5g
300 ° C
Symbol
V DSS
VGS(th) IGSS I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 18A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
200 2
V 4V
±100 nA
25 µA 250 µA
70 mΩ
G
D S
é
(TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Features
International standard package
JEDEC TO-247 AD
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings H...
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