IXFH80N08

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80 V = 80 A = 9 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I D25 I L(RMS) I DM IAR EAR EAS dv/dt P D T J TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C Lead current limit T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω T C = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 80 80 ±20 ±30 80 75 320 80 50 2.5 5 V V V V A A A A mJ J V/ns 300 -55 to +150 150 -55 to +150 W °C °C °C 300 °C 1.13/10 Nm/lb.in. 6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA 80 2.0 VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 4.0 V ±100 nA 50 µA 1 mA 9 mΩ TO-247 AD (IXFH) (TAB) TO-268 ( IXFT) Case Style G S G = Gate D = Drain S = Source TAB = Drain (TAB) Features l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) l Molding epoxies meet UL 94 V-0 flammability classification Advantages l Easy to mount l Space savings l High power density © 2001 IXYS All righ...