Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T IXTA 160N085T IXTP 160N085T
VDSS =
ID25 = =RDS(on)
85 V 160 A 6.0 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS V
DGR
VGSM ID25 IDRMS IDM IAR
E AS
dv/dt
PD TJ TJM Tstg TL
M d
Weight
TJ = 25°C to 175°C
T J
=
25°C
to
175°C;
R GS
=
1
...
