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IXTA160N085T Dataheets PDF



Part Number IXTA160N085T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTA160N085T DatasheetIXTA160N085T Datasheet (PDF)

Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS V DGR VGSM ID25 IDRMS IDM IAR E AS dv/dt PD TJ TJM Tstg TL M d Weight TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VD.

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Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS V DGR VGSM ID25 IDRMS IDM IAR E AS dv/dt PD TJ TJM Tstg TL M d Weight TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 85 V 85 V ±20 V 160 A 75 A 350 A 75 A 1.0 J 3 V/ns 360 -55 ... +175 175 -55 ... +150 300 260 W °C °C °C °C °C 1.13/10 Nm/lb.in. 5.5 g 4g 3g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 85 V V GS(th) V = V , I = 1 mA DS GS D 2.0 4.0 V IGSS VGS = ±20 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 50 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 5.0 6.0 m Ω G D S TO-220 (IXTP) (TAB) G DS TO-263 (IXTA) (TAB) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99347(02/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Q g(on) Qgs Q gd RthJC RthCK IXTA 160N085T IXTP 160N085T IXTQ 160N085T Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 50A, pulse test DS D 64 85 S VGS = 0 V, VDS = 25 V, f = 1 MHz 6400 927 92 pF pF pF VGS = 10 V, VDS = 60 V, ID = 35A RG = 5 Ω (External) 37 ns 61 ns 65 ns 36 ns VGS= 10 V, VDS = 40 V, ID = 80 A 164 nC 48 nC 45 nC (TO-3P) (TO-220) 0.21 0.25 0.42 K/W K/W K/W TO-3P (IXTQ) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. IS VGS = 0 V I Repetitive SM VSD IF = 50 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 160 A 350 A 1.2 V t rr I F = 25 A, -di/dt = 100 A/µs QRM VR = 25 V, VGS = 0 V 100 ns 0.6 µC TO-220 (IXTP) Outline TO-263 (IXTA) Outline Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 4.83 2.03 2.79 0.51 0.99 1.14 1.40 0.46 0.74 1.14 1.40 8.64 9.65 7.11 8.13 9.65 10.29 6.86 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 0.46 0.74 Inches Min. Max. .160 .190 .080 .110 .020 .039 .045 .055 .018 .029 .045 .055 .340 .380 .280 .320 .380 .405 .270 .320 .100 BSC .575 .625 .090 .110 .040 .055 .050 .070 0 .015 .018 .029 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 I D - Amperes I D - Amperes Fig. 1. Output Characteristics @ 25° C 160 140 VGS = 10V 9V 8V 120 7V 6V 100 5V 80 60 40 20 0 0 4V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VD S - Volts 1 Fig. 3. Output Characteristics @ 150° C 160 140 VGS = 10V 9V 8V 120 7V 6V 100 5V 80 60 4V 40 20 0 0 3V 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VD S - Volts 2 Fig. 5. RDS(on) Norm alize d to ID = 50A Value vs. Drain Current 2.6 2.4 TJ = 175°C 2.2 2 1.8 VGS = 10V 1.6 15V - - - - 1.4 1.2 1 TJ = 25°C 0.8 0 40 80 120 160 200 240 280 320 I D - Amperes RD S ( on) - Normalized © 2005 IXYS All rights reserved I D - Amperes RD S( on) - Normalized I D - Amperes IXTA 160N085T IXTP 160N085T IXTQ 160N085T Fig. 2. Extended Output Characteristics @ 25° C 320 VGS = 10V 280 9V 7V 8V 240 6V 200 160 5V 120 80 40 4V 0 0 0.5 1 1.5 2 2.5 VD S - Volts 3 3.5 4 Fig. 4. RDS(on) Norm alized to ID = 50A Value vs. Junction Tem perature 2. 4 2.2 VGS = 10V 2 1. 8 ID = 100A 1. 6 1.4 ID = 50A 1. 2 1 0. 8 0. 6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 90 80 External Lead Current Limit 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade Fig. 7. Input Adm ittance 240 TJ = -40ºC 200 25ºC 150ºC 160 120 80 40 g f s - Siemens IXTA 160N085T IXTP 160N085T IXTQ 160N085T Fig. 8. Transconductance 140 120 100 TJ = -40ºC 80 25ºC 150ºC 60 40 20 I D - Amperes 0 2.5 3 3.5 4 4.5 5 5.5 6 VG S - Volts 0 0 40 80 120 160 200 240 280 I D - Amperes I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 300 250 200 150 100 TJ =.


IXTQ160N085T IXTA160N085T IXTP160N085T


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