Document
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T IXTA 160N085T IXTP 160N085T
VDSS =
ID25 = =RDS(on)
85 V 160 A 6.0 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS V
DGR
VGSM ID25 IDRMS IDM IAR
E AS
dv/dt
PD TJ TJM Tstg TL
M d
Weight
TJ = 25°C to 175°C
T J
=
25°C
to
175°C;
R GS
=
1
MΩ
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM
TC = 25°C
T C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
10
Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263
85 V 85 V
±20 V
160 A 75 A
350 A 75 A
1.0 J
3 V/ns
360
-55 ... +175 175
-55 ... +150
300 260
W
°C °C °C
°C °C
1.13/10 Nm/lb.in.
5.5 g 4g 3g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
85 V
V GS(th)
V = V , I = 1 mA DS GS D
2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA 250 µA
RDS(on)
VGS = 10 V, ID = 50 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
5.0 6.0 m Ω
G D S
TO-220 (IXTP)
(TAB)
G DS TO-263 (IXTA)
(TAB)
G S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z International standard packages z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount z Space savings z High power density
© 2005 IXYS All rights reserved
DS99347(02/05)
Symbol
g fs
Ciss Coss Crss td(on) tr td(off) tf Q
g(on)
Qgs Q
gd
RthJC RthCK
IXTA 160N085T IXTP 160N085T IXTQ 160N085T
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V = 10 V; I = 50A, pulse test DS D
64 85
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
6400 927 92
pF pF pF
VGS = 10 V, VDS = 60 V, ID = 35A RG = 5 Ω (External)
37 ns 61 ns 65 ns 36 ns
VGS= 10 V, VDS = 40 V, ID = 80 A
164 nC 48 nC 45 nC
(TO-3P) (TO-220)
0.21 0.25
0.42 K/W
K/W K/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0 V
I Repetitive
SM
VSD IF = 50 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
160 A 350 A 1.2 V
t rr
I
F
=
25
A,
-di/dt
=
100
A/µs
QRM VR = 25 V, VGS = 0 V
100 ns 0.6 µC
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Dim.
A A1
b b2
c c2
D D1
E E1 e
L L1 L2 L3 L4
R
Millimeter Min. Max.
4.06 4.83 2.03 2.79
0.51 0.99 1.14 1.40
0.46 0.74 1.14 1.40
8.64 9.65 7.11 8.13
9.65 10.29 6.86 8.13 2.54 BSC
14.61 2.29 1.02 1.27
0
15.88 2.79 1.40 1.78 0.38
0.46 0.74
Inches Min. Max.
.160 .190 .080 .110
.020 .039 .045 .055
.018 .029 .045 .055
.340 .380 .280 .320
.380 .405 .270 .320 .100 BSC
.575 .625 .090 .110 .040 .055 .050 .070
0 .015
.018 .029
Pins: 1 - Gate 3 - Source
2 - Drain 4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents:
4,835,592 4,850,072 4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,710,405B2 6,710,463
6,727,585 6,759,692
I D - Amperes
I D - Amperes
Fig. 1. Output Characteristics
@ 25° C
160 140
VGS = 10V 9V
8V 120 7V 6V
100
5V 80
60
40
20
0 0
4V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VD S - Volts
1
Fig. 3. Output Characteristics
@ 150° C
160
140
VGS = 10V 9V
8V
120 7V 6V
100
5V 80
60
4V 40
20
0 0
3V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VD S - Volts
2
Fig. 5. RDS(on) Norm alize d to ID = 50A Value vs. Drain Current
2.6
2.4 TJ = 175°C
2.2
2
1.8 VGS = 10V
1.6 15V - - - -
1.4
1.2
1
TJ = 25°C
0.8 0
40 80 120 160 200 240 280 320
I D - Amperes
RD S ( on) - Normalized
© 2005 IXYS All rights reserved
I D - Amperes
RD S( on) - Normalized
I D - Amperes
IXTA 160N085T IXTP 160N085T IXTQ 160N085T
Fig. 2. Extended Output Characteristics
@ 25° C
320
VGS = 10V 280 9V
7V
8V 240
6V
200
160
5V 120
80
40 4V
0 0
0.5
1 1.5 2 2.5
VD S - Volts
3 3.5
4
Fig. 4. RDS(on) Norm alized to ID = 50A Value vs. Junction Tem perature
2. 4
2.2 VGS = 10V
2
1. 8 ID = 100A
1. 6
1.4 ID = 50A 1. 2
1
0. 8
0. 6 -50 -25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Tem perature
90 80 External Lead Current Limit
70
60
50
40
30
20
10
0 -50 -25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
Fig. 7. Input Adm ittance
240
TJ = -40ºC 200 25ºC
150ºC
160
120
80
40
g f s - Siemens
IXTA 160N085T IXTP 160N085T IXTQ 160N085T
Fig. 8. Transconductance
140
120
100
TJ = -40ºC 80 25ºC
150ºC
60
40
20
I D - Amperes
0 2.5 3 3.5 4 4.5 5 5.5 6
VG S - Volts
0
0 40 80 120 160 200 240 280
I D - Amperes
I S - Amperes
Fig. 9. Source Current vs. Source-To-Drain Voltage
300
250
200
150
100
TJ =.