SUP60N02-4m5P

SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0045 at VGS = 10 V 20 0.0065 at VGS = 4.5 V ID (A)a 60 60 TO-220AB FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested APPLICATIONS OR-ing D RoHS COMPLIANT DRAIN connected to TAB G GD S Top View Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TA = 25 °Cd PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC S N-Channel MOSFET Limit 20 ± 20 60a 60a 120 50 125 120c 3.75 - 55 to 175 Limit 40 1.25 Unit V A mJ W °C Unit °C/W Document Number: 69821 S-80182-Rev. A, 04-Feb-08 www.vishay.com 1 SUP60N02-4m5P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage D...