Power MOSFETs
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM6N90 IXFH/IXFM6N100
V...
Description
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM6N90 IXFH/IXFM6N100
V DSS
900 V 1000 V
I
D25
6A 6A
trr £ 250 ns
R DS(on)
1.8 W 2.0 W
Symbol VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR dv/dt
PD T
J
TJM T
stg
TL Md Weight
Symbol
VDSS
VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
6N90 6N100
900 1000
±20 ±30
6 24
6 18
5
V V V V A A A mJ V/ns
180 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
6N90 6N100
VDS = VGS, ID = 2.5 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
6N90 6N100
Pulse test, t £ 300 ms, duty cycle d £ 2 %
900 1000
2.0
V V 4.5 V
±100 nA
250 mA 1 mA
1.8 W 2.0 W
TO-204 AA (IXFM)
(TAB)
G = Gate, S = Source,
G D
D = Drain, TAB = Drain
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated Low package inductance
- easy to drive and to protect Fast intrinsic ...
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