BVDSX/ BVDGX
250V
RDS(ON) (max)
4Ω
IDSS (min) 360mA
Package SOT-89
Features
• Depletion mode device offers low RDS(O...
BVDSX/ BVDGX
250V
RDS(ON) (max)
4Ω
IDSS (min) 360mA
Package SOT-89
Features
Depletion mode device offers low RDS(ON) at cold temperatures
Low on resistance 4 ohms max. at 25ºC
High input impedance
High breakdown voltage 250V
Low VGS(off) voltage -1.6 to -3.9V Small package size SOT89
Applications
Ignition Modules Normally-on Switches Solid State Relays Converters Telecommunications Power Supply
Package Pinout
G D S
D
(SOT89)
CPC3703
N-Channel Depletion-Mode Vertical DMOS FETs
Description
The CPC3703 is an N-channel, depletion mode, field effect
transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable FET device that has been used extensively in Clare’s Solid State Relays for industrial and telecommunications applications.
This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4Ω maximum, on-state resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
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