IXTI12N50P

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA12N50P IXTI12N50P IXTP12N50P VDSS = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from case for 10s Plastic body for 10s Mounting torque Mounting force (TO-220) (TO-263) TO-263 Leaded TO-263 TO-220 Maximum Ratings 500 500 V V ±30 V ±40 V 12 A 30 A 12 A 600 mJ 10 V/ns 200 W -55 ... +150 150 -55 ... +150 300 260 1.13 / 10 10..65 / 2.2..14.6 2.5 2.8 3.0 °C °C °C °C °C Nm/lb.in. N/lb. g g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.5 V ±100 nA 5 μA 250 μA 500 mΩ GS (TAB) Leaded TO-263 (IXTI) G D S TO-220 (IXTP) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2008 IXYS CORPORATION, All rights reserved DS99322F(04/08) Symbol Test Condit...