Document
MIC94050/94051
Micrel
MIC94050/94051
4-Terminal SymFET™ P-Channel MOSFET
General Description
The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package.
Designed for high-side switch applications where space is critical, the MIC94050/1 exhibits an on-resistance of typically 0.125Ω at 4.5V gate-to-source voltage. The MIC94050/1 also operates with only 1.8V gate-to-source voltage.
The MIC94050 is the basic 4-lead P-channel MOSFET. The MIC94051 is a variation that includes an internal gate pullup resistor that can reduce the system parts count in many applications.
The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes reverse-blocking switch applications practical.
The small size, low threshold, and low RDS(on) make the MIC94050/1 the ideal choice for PCMCIA, USB, back-up battery-power, and distributed power management applications.
SymFET™
Features
• 0.125Ω typical on-resistance at 4.5V gate-to-source voltage
• Operates with 1.8V gate-to-source voltage • Separate substrate connection allows reverse-blocking
Applications
• Distributed power management • PCMCIA card power management • USB ports • Battery-powered computers, peripherals • Handheld bar-code scanners • Portable communications equipment • Reverse blocking battery management
Ordering Information
Part Number Temp. Range* MIC94050BM4 –40°C to +150°C MIC94051BM4 –40°C to +150°C MIC94050YM4 –40°C to +150°C MIC94051YM4 –40° to +150°C * Operating Junction Temperature
Package SOT-143 SOT-143 SOT-143 SOT-143
Pb-FREE NO NO YES YES
Pin Configuration
Typical PCB Layout
Part Identification
Drain Substrate
P5x
Gate Source
Part Number MIC94050BM4 MIC94051BM4 MIC94050YM4 MIC94051YM4
Identification P50 P51 P50 P51
D
PCB heat sikn plane improves heat dissipation SS
SOT-143 Package (M4)
Schematic Symbol
GS PCB traces
Functional Diagrams
S
S
Source Gate Substrate
Drain
~350kΩ
G SS G
SS
Internal
gate-to-source
D
pull-up resistor
D
Schematic Symbol
MIC94050
MIC94051
SymFET is a trademark of Micrel, Inc.
Micrel, Inc. • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com
January 2007
1 MIC94050/94051
MIC94050/94051
Absolute Maximum Ratings
Drain-to-Source Voltage ............................................................ –6V Gate-to-Source Voltage ................................................. –6V
Continuous Drain Current TA = 25°C (VGS = 4.5V) ............................................ 1.8A TA = 100°C (VGS = 4.5V) .......................................... 1.2A
Total Power Dissipation TA = 25°C............................................................. 568mW TA = 100°C........................................................... 227mW
Operating Junction Temperature .............. –40°C to +150°C
Storage Temperature................................ –55°C to +150°C
ESD Rating, Note 2
Micrel
Operating Ratings
Thermal Resistance θJA...................................................................... 220°C/W θJC ..................................................................... 130°C/W
Electrical Characteristics (Note 1)
Symbol Parameter
Condition (Note 1)
VGS IGSS RGS CISS IDSS
RDS(ON)
gFS
Gate Threshold Voltage Gate-Body Leakage Gate-Source Resistance Input Capacitance Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
VDS = VGS, ID = –250µA VDS = 0V, VGS = –4.5V, Note 2, Note 3 VDS = 0V, VGS = –4.5V, Note 2, Note 4 VGS = 0V, VDS = –5.5V VDS = –5.5V, VGS = 0V VDS = –5.5V, VGS = 0V, TJ = 85°C VGS = –4.5V, ID = –100mA VGS = –3.6V, ID = –100mA VGS = –2.5V, ID = –100mA VGS = –1.8V, ID = –100mA VDS = –5.5V, ID = –200mA, Note 5
Note 1. Note 2.
TA = 25°C unless noted. Substrate connected to source for all conditions.
ESD gate� precautions required
Note 3. MIC94050 only.
Note 4. MIC94051 only.
Note 5. Pulse Test: Pulse Width ≤ 80µs, Duty Cycle ≤ 0.5%.
Min Typ Max Units
0.5 1.2 V
1 µA
200 350 500
kΩ
600 pF
1 µA
5 µA
0.125 0.135 0.165 0.225
0.160 0.180 0.200 0.320
Ω Ω Ω Ω
3S
MIC94050/94051
2
January 2007
MIC94050/94051
Typical Characteristics
ID (A)
Drain Characteristics
10
9 8 3.5VGS
7 3.0VGS 6 5 2.5VGS
4 3
2.0VGS
2
1 1.5VGS 00 1 2 3 4 5 DRAIN-TO-SOURCE VOLTAGE (V)
Source Drain Diode Forward Voltage Drop 2.5 vs. Current
2
1.5
1
0.5 100µs Pulse 00 1 2 3 4 DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE DIODE VF (V)
GATE THRESHOLD (V)
On-Resistance vs. Gate-to-Source Voltage
1000 900 800 700 ID = 1A 600 500 400 300 200 100 ID = 100mA 00 1 2 3 4 5 6 GATE-TO-SOURCE VOLTAGE (V)
Gate Threshold vs. Temperature
1.0 0.9 ID = –250µA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
TEMPERATURE (°C)
-60 -40 -20
0 20 40 60 80 100 120 140 160
RDS(ON)(mΩ) RDS(ON) (mΩ)
RDS(ON) (NORMALIZED)
Micrel
500 400 300 200 100
00
RDS(ON) vs. Drain .