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MIC94051 Dataheets PDF



Part Number MIC94051
Manufacturers Micrel Semiconductor
Logo Micrel Semiconductor
Description P-Channel MOSFET
Datasheet MIC94051 DatasheetMIC94051 Datasheet (PDF)

MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET™ P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94050/1 exhibits an on-resistance of typically 0.125Ω at 4.5V gate-to-source voltage. The MIC94050/1 also operates with only 1.8V gate-to-source voltage. The MIC94050 is the basic 4-lead P-channel MOSFE.

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MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET™ P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94050/1 exhibits an on-resistance of typically 0.125Ω at 4.5V gate-to-source voltage. The MIC94050/1 also operates with only 1.8V gate-to-source voltage. The MIC94050 is the basic 4-lead P-channel MOSFET. The MIC94051 is a variation that includes an internal gate pullup resistor that can reduce the system parts count in many applications. The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes reverse-blocking switch applications practical. The small size, low threshold, and low RDS(on) make the MIC94050/1 the ideal choice for PCMCIA, USB, back-up battery-power, and distributed power management applications. SymFET™ Features • 0.125Ω typical on-resistance at 4.5V gate-to-source voltage • Operates with 1.8V gate-to-source voltage • Separate substrate connection allows reverse-blocking Applications • Distributed power management • PCMCIA card power management • USB ports • Battery-powered computers, peripherals • Handheld bar-code scanners • Portable communications equipment • Reverse blocking battery management Ordering Information Part Number Temp. Range* MIC94050BM4 –40°C to +150°C MIC94051BM4 –40°C to +150°C MIC94050YM4 –40°C to +150°C MIC94051YM4 –40° to +150°C * Operating Junction Temperature Package SOT-143 SOT-143 SOT-143 SOT-143 Pb-FREE NO NO YES YES Pin Configuration Typical PCB Layout Part Identification Drain Substrate P5x Gate Source Part Number MIC94050BM4 MIC94051BM4 MIC94050YM4 MIC94051YM4 Identification P50 P51 P50 P51 D PCB heat sikn plane improves heat dissipation SS SOT-143 Package (M4) Schematic Symbol GS PCB traces Functional Diagrams S S Source Gate Substrate Drain ~350kΩ G SS G SS Internal gate-to-source D pull-up resistor D Schematic Symbol MIC94050 MIC94051 SymFET is a trademark of Micrel, Inc. Micrel, Inc. • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 944-0970 • http://www.micrel.com January 2007 1 MIC94050/94051 MIC94050/94051 Absolute Maximum Ratings Drain-to-Source Voltage ............................................................ –6V Gate-to-Source Voltage ................................................. –6V Continuous Drain Current TA = 25°C (VGS = 4.5V) ............................................ 1.8A TA = 100°C (VGS = 4.5V) .......................................... 1.2A Total Power Dissipation TA = 25°C............................................................. 568mW TA = 100°C........................................................... 227mW Operating Junction Temperature .............. –40°C to +150°C Storage Temperature................................ –55°C to +150°C ESD Rating, Note 2 Micrel Operating Ratings Thermal Resistance θJA...................................................................... 220°C/W θJC ..................................................................... 130°C/W Electrical Characteristics (Note 1) Symbol Parameter Condition (Note 1) VGS IGSS RGS CISS IDSS RDS(ON) gFS Gate Threshold Voltage Gate-Body Leakage Gate-Source Resistance Input Capacitance Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = –250µA VDS = 0V, VGS = –4.5V, Note 2, Note 3 VDS = 0V, VGS = –4.5V, Note 2, Note 4 VGS = 0V, VDS = –5.5V VDS = –5.5V, VGS = 0V VDS = –5.5V, VGS = 0V, TJ = 85°C VGS = –4.5V, ID = –100mA VGS = –3.6V, ID = –100mA VGS = –2.5V, ID = –100mA VGS = –1.8V, ID = –100mA VDS = –5.5V, ID = –200mA, Note 5 Note 1. Note 2. TA = 25°C unless noted. Substrate connected to source for all conditions. ESD gate� precautions required Note 3. MIC94050 only. Note 4. MIC94051 only. Note 5. Pulse Test: Pulse Width ≤ 80µs, Duty Cycle ≤ 0.5%. Min Typ Max Units 0.5 1.2 V 1 µA 200 350 500 kΩ 600 pF 1 µA 5 µA 0.125 0.135 0.165 0.225 0.160 0.180 0.200 0.320 Ω Ω Ω Ω 3S MIC94050/94051 2 January 2007 MIC94050/94051 Typical Characteristics ID (A) Drain Characteristics 10 9 8 3.5VGS 7 3.0VGS 6 5 2.5VGS 4 3 2.0VGS 2 1 1.5VGS 00 1 2 3 4 5 DRAIN-TO-SOURCE VOLTAGE (V) Source Drain Diode Forward Voltage Drop 2.5 vs. Current 2 1.5 1 0.5 100µs Pulse 00 1 2 3 4 DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE DIODE VF (V) GATE THRESHOLD (V) On-Resistance vs. Gate-to-Source Voltage 1000 900 800 700 ID = 1A 600 500 400 300 200 100 ID = 100mA 00 1 2 3 4 5 6 GATE-TO-SOURCE VOLTAGE (V) Gate Threshold vs. Temperature 1.0 0.9 ID = –250µA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 TEMPERATURE (°C) -60 -40 -20 0 20 40 60 80 100 120 140 160 RDS(ON)(mΩ) RDS(ON) (mΩ) RDS(ON) (NORMALIZED) Micrel 500 400 300 200 100 00 RDS(ON) vs. Drain .


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