CPC5602

INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 350 14 2.5 Units V  W Features 350V Drain-to-Source Voltage Depletion Mode Device Offers Low RDS(on) at Cold Temperatures Low On-resistance: 8 (Typical) @ 25°C Low VGS(off) Voltage: -2.0V to -3.6V High Input Impedance Low Input and Output Leakage Small Package Size SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings Applications Support Component for LITELINK™ Data Access Arrangement (DAA) Telecommunications Normally On Switches Ignition Modules Converters Security Power Supplies CPC5602 N-Channel Depletion Mode FET Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly in difficult application environments such as telecommunications, security, and power supplies. One of the primary applications for the CPC5602 is as a linear regulator/hook switch for the LITELINK family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A. The CPC5602 has a typical on-resistance of 8, a drain-to-source voltage of 350V, and is available in an SOT-223 package. As with all MOS devices, the ...