Si7445DP

P-Channel 20-V (D-S) MOSFET Si7445DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0077 at VGS = - 4.5 V - 20 0.0094 at VGS = - 2.5 V 0.0125 at VGS = - 1.8 V PowerPAK SO-8 ID (A) - 19 - 17 - 15 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS Load Switch Battery Applications 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7445DP-T1-E3 (Lead (Pb)-free) Si7445DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25°C TA = 70°C TA = 25°C TA = 70°C VDS VGS ID IDM IS PD TJ, Tstg - 20 ±8 - 19 - 12 - 15 - 9 - 50 - 4.3 - 1.6 5.4 1.9 3.4 1.2 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s Steady State RthJA 18 52 23 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.3 Notes a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The Powe...