Si7407DN

P-Channel 12-V (D-S) MOSFET Si7407DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = - 4.5 V - 12 0.016 at VGS = - 2.5 V 0.024 at VGS = - 1.8 V ID (A) - 15.6 - 13.5 - 11 PowerPAK 1212-8 FEATURES Halogen-free Option Available TrenchFET® Power MOSFETS: 1.8 V Rated New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile Ultra-Low RDS(on) Available RoHS* COMPLIANT APPLICATIONS Load Switch PA Switch Battery Switch 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3 G 4 Bottom View Ordering Information: Si7407DN-T1 Si7407DN-T1-E3 (Lead (Pb)-free) Si7407DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendationsb, c TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C VDS VGS ID IDM IS PD TJ, Tstg - 12 ±8 - 15.6 - 9.9 - 11.2 - 7.2 - 30 - 3.2 - 1.3 3.8 1.5 2.0 0.8 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t ≤ 10 s Steady State Symbol RthJA Typical 26 65 Maximum 33 81 Unit °C/W Maximum Junction-to-Case Steady State RthJC 1.9 2.4 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (htt...