Si4362BDY

N-Channel 30-V (D-S) MOSFET Si4362BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0046 at VGS = 10 V 0.0054 at VGS = 4.5 V ID (A)a 19.8 18.2 Qg (Typ.) 36 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET Optimized for "Low Side" Synchronous Rectifier Operation 100 % Rg Tested APPLICATIONS DC/DC Converters Synchronous Rectifiers D G Top View Ordering Information: Si4362BDY-T1-E3 (Lead-(Pb)-free) Si4362BDY-T1-GE3 (Lead-(Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 12 29 23 19.8b, c 15.8b, c 60 6 2.7b, c 6.6 4.2 3.0b, c 2b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 73539 S09-0226-Rev. B, 09-Feb-09 Symbol RthJA RthJF Typical 34 15 Maximum 41 19 ...