SS8050
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION.
• Compl...
SS8050
NPN EPITAXIAL SILICON
TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION.
Complimentary to SS8550
Î Collector Current IC=1.5A
Collector Dissipation:PC=2W (TC=25 )
ÎABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic
Symbol
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO IC PC TJ TSTG
1. Emitter 2. Base 3. Collector
40 25 6 1.5 1 150 -65 ~ 150
Unit
V V V A
WÎÎ
TO-92
ÎELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Output Capacitance
Current Gain-Bandwidth Product
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE COB
fT
Test Conditions
ÀIC=100 , IE=0 ÀIC=2mA, IB=0
IE=100 , IC=0 VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCB=10V, IE=0 f=1MHz
VCE=10V, IC=50mA
hFE(2) CLASSIFICATION
Classification
B
hFE(2)
85-160
C 120-200
D 160-300
Min 40 25 6
45 85 40
100
Typ
135 160 110 0.28 0.98 0.66 9.0 190
Max
100 100 300 0.5 1.2
1
Unit
V V V nA nA
V V V pF
MHz
SS8050
NPN EPITAXIAL SILICON
TRANSISTOR
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