TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183
High Current Switching Applications
• Low collector-emitter satura...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type
2SA2183
High Current Switching Applications
Low collector-emitter saturation : VCE(sat) = −1.0 V(max)
2SA2183
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −60 V
Collector-emitter voltage
VCEO −60 V
Emitter-base voltage
VEBO −7 V
Collector current
DC Pulse
IC ICP
−5.0 −8.0
A A
Base current
IB
−0.5
A
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
PC
Tj Tstg
2 20 150 −55 to 150
W W °C °C
1 : Base 2 : Collector 3 : Emitter
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-67
temperature/current/voltage and the significant change in
TOSHIBA
2-10U1A
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
Weight: 1.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-16
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage Base-em...