QM3009S

QM3009S P-Ch 30V Fast Switching MOSFETs General Description The QM3009S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3009S meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -30V RDSON 125mΩ ID -3.5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOP8 Pin Configuration DD DD Absolute Maximum Ratings S SS G Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating -30 ±20 -3.5 -2.7 -7 2.1 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 85 60 Unit ℃/W ℃/W Rev A.01 D031610 1 QM3009S P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Tempera...