Document
QM2415SM8
P-Ch 20V Fast Switching MOSFETs
General Description
The QM2415SM8 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2415SM8 meet the RoHS and Green Product requirement , with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available
Product Summery
BVDSS -20V
RDSON 130mΩ
ID -3.3A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
PRPAK 3X2 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM PD@TC=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating -20 ±8 -3.3 -2 -7 1.79
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Typ. -----
Max. 110 70
Unit ℃/W ℃/W
Rev A.01 D110209
1
QM2415SM8
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
IDSS
IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate Threshold Voltage VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=-250uA Reference to 25℃ , ID=-1mA VGS=-4.5V , ID=-3A VGS=-2.5V , ID=-2.5A VGS=-1.8V , ID=-1A VGS=VDS , ID =-250uA VDS=-20V , VGS=0V , TJ=25℃ VDS=-20V , VGS=0V , TJ=55℃ VGS=±8V , VDS=0V VDS=-5V , ID=-0.9A
VDS=-12V , VGS=-4.5V , ID=-3A
VDD=-12V , VGS=-4.5V , RG=3.3Ω, ID=-3A
VDS=-15V , VGS=0V , f=1MHz
Min. -20 ---------0.3 -------------------------------
Typ. ---
-0.005 105 145 185 -0.6 2.24 ------3.38 6.77 0.55 2.94 5.8 19.1 19.7 6.5 346 50 42
Max. ----130 170 220 -1 --1 5
±100 -----------------------
Unit V
V/℃ mΩ V mV/℃ uA nA S nC
ns
pF
Diode Characteristics
Symbol IS ISM VSD
Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2
Schottky Diode Characteristics
Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃
Min. -------
Typ. -------
Max. -3.3 -7 -1
Unit A A V
Symbol VF IR
Parameter Forward Voltage Drop Maximum Reverse Leakage Current
IS=0.5A VR=20V
Conditions
Min. ---
Typ. -----
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board .