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QM2415SM8 Dataheets PDF



Part Number QM2415SM8
Manufacturers UBIQ
Logo UBIQ
Description P-Ch 20V Fast Switching MOSFETs
Datasheet QM2415SM8 DatasheetQM2415SM8 Datasheet (PDF)

QM2415SM8 P-Ch 20V Fast Switching MOSFETs General Description The QM2415SM8 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2415SM8 meet the RoHS and Green Product requirement , with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device.

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QM2415SM8 P-Ch 20V Fast Switching MOSFETs General Description The QM2415SM8 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2415SM8 meet the RoHS and Green Product requirement , with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS -20V RDSON 130mΩ ID -3.3A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch PRPAK 3X2 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -20 ±8 -3.3 -2 -7 1.79 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ. ----- Max. 110 70 Unit ℃/W ℃/W Rev A.01 D110209 1 QM2415SM8 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=-250uA Reference to 25℃ , ID=-1mA VGS=-4.5V , ID=-3A VGS=-2.5V , ID=-2.5A VGS=-1.8V , ID=-1A VGS=VDS , ID =-250uA VDS=-20V , VGS=0V , TJ=25℃ VDS=-20V , VGS=0V , TJ=55℃ VGS=±8V , VDS=0V VDS=-5V , ID=-0.9A VDS=-12V , VGS=-4.5V , ID=-3A VDD=-12V , VGS=-4.5V , RG=3.3Ω, ID=-3A VDS=-15V , VGS=0V , f=1MHz Min. -20 ---------0.3 ------------------------------- Typ. --- -0.005 105 145 185 -0.6 2.24 ------3.38 6.77 0.55 2.94 5.8 19.1 19.7 6.5 346 50 42 Max. ----130 170 220 -1 --1 5 ±100 ----------------------- Unit V V/℃ mΩ V mV/℃ uA nA S nC ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2 Schottky Diode Characteristics Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Min. ------- Typ. ------- Max. -3.3 -7 -1 Unit A A V Symbol VF IR Parameter Forward Voltage Drop Maximum Reverse Leakage Current IS=0.5A VR=20V Conditions Min. --- Typ. ----- Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board .


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