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BD136G Dataheets PDF



Part Number BD136G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Plastic Medium-Power Silicon PNP Transistors
Datasheet BD136G DatasheetBD136G Datasheet (PDF)

BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • BD 136, 138, 140 are complementary with BD 135, 137, 139 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD136G BD138G BD140G .

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BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • BD 136, 138, 140 are complementary with BD 135, 137, 139 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD136G BD138G BD140G VCEO Vdc 45 60 80 Collector−Base Voltage BD136G BD138G BD140G VCBO Vdc 45 60 100 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC IB PD 5.0 Vdc 1.5 Adc 0.5 Adc 1.25 Watts 10 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 Watts 100 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 10 Thermal Resistance, Junction−to−Ambient RqJA 100 Unit °C/W °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 December, 2013 − Rev. 16 www.onsemi.com 1.5 A POWER TRANSISTORS PNP SILICON 45, 60, 80 V, 12.5 W COLLECTOR 2, 4 3 BASE 1 EMITTER 123 TO−225 CASE 77−09 STYLE 1 MARKING DIAGRAM YWW BD1xxG Y WW BD1xx G = Year = Work Week = Device Code xx = 36, 38, 40 = Pb−Free Package ORDERING INFORMATION Device Package Shipping BD136G TO−225 (Pb−Free) 500 Units/Box BD138G TO−225 (Pb−Free) 500 Units/Box BD140G TO−225 (Pb−Free) 500 Units/Box Publication Order Number: BD136G/D BD136G, BD138G, BD140G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.03 Adc, IB = 0) BD136G BD138G BD140G BVCEO 45 60 80 Vdc − − − Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125 _C) ICBO − − mAdc 0.1 10 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − mAdc 10 DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A, VCE = 2 V) hFE* − 25 − 40 250 25 − Collector−Emitter Saturation Voltage (Note 1) (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat)* − Vdc 0.5 Base−Emitter On Voltage (Note 1) (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on)* − Vdc 1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1000 100 10 0.001 150°C 25°C −55°C TYPICAL CHARACTERISTICS VCE = 2 V 0.5 IC/IB = 10 0.4 0.3 0.2 −55°C 25°C 150°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain 0.1 0 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 2. Collector−Emitter Saturation Voltage www.onsemi.com 2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) C, CAPACITANCE (pF) BD136G, BD138G, BD140G TYPICAL CHARACTERISTICS VBE(on), BASE−EMITTER ON VOLTAGE (V) 1.2 IC/IB = 10 1.0 0.8 0.6 0.4 −55°C 25°C 150°C 1.2 VCE = 2 V 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3. Base−Emitter Saturation Voltage 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 4. Base−Emitter On Voltage 1000 100 10 f = 1 MHz Cib 5 ms 0.5 ms 0.1 ms 1 Cob TJ = 125°C dc IC, COLLECTOR CURRENT (A) 10 1 0.1 1 10 VR, REVERSE VOLTAGE (V) Figure 5. Capacitance 0.1 0.01 100 1 BD136 BD138 BD140 10 80 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 6. Active−Region Safe Operating Area PD, POWER DISSIPATION (W) 1.50 1.25 1.00 0.75 0.50 0.25 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 7. Power Derating www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−225 CASE 77−09 4 ISSUE AD DATE 25 MAR 2015 123 FRONT VIEW 321 BACK VIEW SCALE 1:1 E Q D P 1 23 L1 2X b2 2X e b FRONT VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER A1 ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A 3. NUMBER AND SHAPE OF LUGS OPTIONAL. PIN 4 BACKSIDE TAB MILLIMETERS DIM MIN MAX A 2.40 3.00 A1 1.00 1.50 b 0.60 0.90 b2 0.51 0.88 c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.5.


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