Document
BD136G, BD138G, BD140G
Plastic Medium-Power Silicon PNP Transistors
This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features
• High DC Current Gain • BD 136, 138, 140 are complementary with BD 135, 137, 139 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage BD136G BD138G BD140G
VCEO
Vdc
45
60
80
Collector−Base Voltage BD136G BD138G BD140G
VCBO
Vdc
45
60
100
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC IB PD
5.0
Vdc
1.5
Adc
0.5
Adc
1.25
Watts
10
mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
12.5
Watts
100
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case
RqJC
10
Thermal Resistance, Junction−to−Ambient RqJA
100
Unit °C/W °C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 16
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1.5 A POWER TRANSISTORS PNP SILICON
45, 60, 80 V, 12.5 W
COLLECTOR 2, 4
3 BASE
1 EMITTER
123
TO−225 CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW BD1xxG
Y WW BD1xx
G
= Year = Work Week = Device Code
xx = 36, 38, 40 = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD136G
TO−225 (Pb−Free)
500 Units/Box
BD138G
TO−225 (Pb−Free)
500 Units/Box
BD140G
TO−225 (Pb−Free)
500 Units/Box
Publication Order Number: BD136G/D
BD136G, BD138G, BD140G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.03 Adc, IB = 0) BD136G BD138G BD140G
BVCEO
45 60 80
Vdc
− − −
Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125 _C)
ICBO − −
mAdc 0.1 10
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO −
mAdc 10
DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A, VCE = 2 V)
hFE*
−
25
−
40
250
25
−
Collector−Emitter Saturation Voltage (Note 1) (IC = 0.5 Adc, IB = 0.05 Adc)
VCE(sat)* −
Vdc 0.5
Base−Emitter On Voltage (Note 1) (IC = 0.5 Adc, VCE = 2.0 Vdc)
VBE(on)* −
Vdc 1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1000
100
10 0.001
150°C 25°C −55°C
TYPICAL CHARACTERISTICS
VCE = 2 V
0.5 IC/IB = 10
0.4
0.3
0.2
−55°C
25°C
150°C
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
0.1
0
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 2. Collector−Emitter Saturation Voltage
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VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
C, CAPACITANCE (pF)
BD136G, BD138G, BD140G
TYPICAL CHARACTERISTICS
VBE(on), BASE−EMITTER ON VOLTAGE (V)
1.2 IC/IB = 10
1.0
0.8
0.6
0.4
−55°C 25°C
150°C
1.2 VCE = 2 V
1.0
−55°C 0.8
25°C
0.6
150°C 0.4
0.2
0.2
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. Base−Emitter On Voltage
1000 100
10
f = 1 MHz Cib
5 ms
0.5 ms
0.1 ms
1
Cob
TJ = 125°C
dc
IC, COLLECTOR CURRENT (A)
10
1 0.1
1
10
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitance
0.1
0.01
100
1
BD136 BD138 BD140
10
80
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Active−Region Safe Operating Area
PD, POWER DISSIPATION (W)
1.50
1.25
1.00
0.75
0.50
0.25
0 0
20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 7. Power Derating
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−225
CASE 77−09
4
ISSUE AD
DATE 25 MAR 2015
123 FRONT VIEW
321 BACK VIEW
SCALE 1:1
E
Q
D P
1 23
L1
2X b2
2X e b
FRONT VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
PIN 4 BACKSIDE TAB
MILLIMETERS
DIM MIN MAX A 2.40 3.00 A1 1.00 1.50 b 0.60 0.90 b2 0.51 0.88 c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.5.