NONVOLATILE ELECTRICALLY ERASABLE PROM
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL PERIPHERAL INTERFACE (...
Description
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL PERIPHERAL INTERFACE (SPI).
DESCRIPTION
The IN25АА020N/D are a 2K(256x8) serial Electrically Erasable PROM with SPI interface. *The IN25АА040N/D are a 4K (512x8) serial Electrically Erasable PROM with SPI interface (SPI). The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface. ICs are realized in SO-8 (MS-012АA) and DIP-8 (MS-001BA)
FEATURES
- Data capacity, QINF: for IN25АА020N, IN25АА020D for IN25АА040N, IN25АА040D
2048 bit, 4096 bit;
- Maximum clock frequency, fC: for 4,5 V ≤ UCC ≤ 5,5 V for 2,5 V ≤ UCC ≤ 5,5 V for 1,8 V ≤ UCC ≤ 5,5 V - Maximum stand-by current, ICC:
for UCC = 5,5 V, UIL = 0 V, UIH = UCC for UCC = 2,5 V, UIL = 0 V, UIH = UCC
3 MHz; 2 MHz; 1 MHz;
5,0 uA 1,0 uA;
- Maximum read current, IOCCR :
for UCC = 5,5 В, fC = 3,0 МГц, SO pin is not loaded .…1,0 mA,
for UCC = 2,5 В, fC = 2,0 МГц, SO pin is not loaded …..0,5 mA;
- Maximum write current, IOCCW :
for UCC = 5,5 V
5,0 mA;
for UCC = 2,5 V
3,0 mA;
- Byte & page (16 bytes) data write modes are available;
- Endurance NE/W, …...1000000 cycles; - Write protection block protect none, 1/4, 1/2, or all of storage
array;
- Power on/off data protection circuitry;
- Supply voltage UCC 1,8 … 5,5 V; - Temperature range -40 … +85°C.
- 100 years non-volatile data retention time
N SUFFIX DIP
8
1 D SUFFIX 8 SOIC
1
Pin Name
CS SO
WP GND
SI SCK
HOLD VCC
Func...
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