Document
IN93AA66N, IN93AA66D
4K-BIT SERIAL EEPROM WITH MICROWIRE INTEFACE
(compatible to САТ93С66 Catalyst)
DESCRIPTION The IN93LC66 is a Electric erasable programmable ROM (EEPROM) memory data capacity 4K (512x8 or 256x16) with 3-wire interface. There are 3 modification of ICs A: ICs IN93AA66AD/AN are 8 bits registers (512х8) - ORG pin not used B: ICs IN93AA66BD/BN are 16 bits registers (256х16) - ORG pin not used C: ICs IN93AA66CN/CD are configured as either registers of 8 bits (ORG pin at GND) or 16 bits (ORG pin at VCC, or not connected). Each register can be written (or read) serially by using the DI (or DO) pin. The ICs is purposed for reading, writing & nonvolatile data storage. ICs can be used in TV-sets, telecom equipment & consumer electronic devices.
FEATURES
■ 100 year data (4K) retention for Ta=25oC;
■ Single power supply source (VСС = 1,8 V – 6,0 V);
■ Build-in voltage multiplier; ■ Serial I/O bus; ■ Autoincrement of address word; ■ Self-timed write cycle; ■ 1,000,000 Program/erase cycles; ■ Power-up internal logic setup; ■ Read cycles quantity are not limited; ■ Low power consumption; ■ Operating temperature range -40 … +85 oC.
N SUFFIX DIP
8
1 D SUFFIX 8 SOIC
1
PIN FUNCTIONS
Pin Name
Function
CS Chip Select
CS 01
08 Vcc
SK Clock Input DI Serial Data Input
SK 02
07 NC
DO
VCC GND
ORG*
Serial Data Output +1.8 to 6.0V Power Supply Ground Memory Organization pin *
DI 03 DO 04
06 ORG*(NC) 05 GND
NC No Connection
Note
* this pin is present only in IN93AA66CN, IN93AA66CD:
When the ORG pin is connected to VCC, the x16 organization is selected. When it is connected to ground, the x8 pin is selected.
If the ORG pin is left unconnected, then an internal pullup device will select the x16 organization.
Ver.00/13.10.2008
1 IN93AA66-TSe.doc 886784
IN93AA66N, IN93AA66D
IN93AA66AN/AD, IN93AA66BN/BD, IN93AA66CN/CD Block Diagram
Recommended Operation Conditions & Maximum Ratings*
Parameter, unit
Supply voltage,V
High level input 4,5 V ≤ Ucc ≤ 5,5 V
voltage, V
1,8 V ≤ Ucc < 4,5 V
Low level input 4,0 V ≤ Ucc ≤ 5,5 V
voltage, V
1,8 V ≤ Ucc < 4,0 V
Low level output current мА Output short-circuit current, mA
1) Time not more than 1 sec
Symbol
UCC UIH UIL IOL IOS 1)
Recommended Operation Conditions
Min Max
1,8 6,0
2,0 0,7Ucc
Ucc + 1,0 Ucc + 1,0
-0,1 0,8 0 0,2Ucc – 2,1 ––
Maximum Ratings
Min - 0,5
Max 7,0
-0,5 Ucc + 1,0
- 0,5
– –
–
– 100
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IN93AA66N, IN93AA66D
Electric Parameters
Parameter, unit Low level output voltage, V
Symbol UOL1
High level output voltage, V
UOH1
Low level output voltage, V
UOL2
High level output voltage, V Low level input leakage current, uA
UOH2 IILL
High level input leakage current, uA IILH
Low level output leakage current, uA
IOLL
High level output leakage current, uA
IOLH
Consumption current (8-bit mode), uA
IN93AA66CN, IN93AA66CD
IN93AA66AN, IN93AA66AD
Consumption current (16-bit mode), uA
IN93AA66CN, IN93AA66CD
ICC1 ICC2
IN93AA66AN, IN93AA66AD
Consumption current (Operating Read), uA
Consumption current (Operating Write/Erase), mA
IOCC R IOCC E/W
tPD0
Output Delay to Low, ns
Output Delay to High, ns
tPD1
Mode
4,5 V ≤ UCC ≤ 5,5 V IOL = 2,1 mA 4,5 V ≤ UCC ≤ 5,5 V IOH = -400 uA 1,8 V ≤ UCC < 4,5 V IOL = 1 mA 1,8 V ≤ UCC < 4,5 V IOH = -100 uA UI =0 V 1,8 V ≤ UCC ≤ 6,0 V UI = Ucc 1,8 V ≤ UCC ≤ 6,0 V 1,8 V ≤ UCC ≤ 6,0 V Ucs =0 V UO = 0 V UO = Ucc UCS = 0 V 1,8 V ≤ UCC ≤ 6,0 V Ucc = 5,5 V UCS = 0 V UORG = 0 V ORG not connected
Ucc = 5,5 V UCS = 0 V UORG = Ucc or not connected
ORG not connected
Ucc = 5,0 V fC = 1 MHz Ucc = 5,0 V fC = 1 MHz
4,5 V ≤ UCC ≤ 6,0 V fC = 2 MHz
2,5 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz
1,8 V ≤ UCC ≤ 6,0 V fC = 250 kHz
4,5 V ≤ UCC ≤ 6,0 V fC = 2 MHz
2,5 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz
1,8 V ≤ UCC ≤ 6,0 V fC = 250 kHz
Min – 2,4 –
UCC-0,2 – – –
Max 0,4 – 0,2 – -1,0 1,0 -1,0
TA, °С
25 ± 10; -45; 85
– 1,0
– 10
– 10
– 500 – 3,0 – 250 – 500 – 1000 – 250 – 500 – 1000
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3 IN93AA66-TSe.doc 886784
IN93AA66N, IN93AA66D
Parameter, unit Output Delay to High-Z, ns
Symbol tHZ
Write/Erase cycle, ms
tCY
Output Delay to Status Check, ns
tSV
Power-up to Read Operation Time, ms
tPUR
Power-up to Wtite Operation Time, ms
tPUW
Program/erase cycles
NE/W
Mode
4,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 250 kHz 4,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 250 kHz 4,5 V ≤ UCC ≤ 6,0 V fC = 2 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 250 kHz 4,5 V ≤ UCC ≤ 6,0 V fC = 2 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 250 kHz 4,5 V ≤ UCC ≤ 6,0 V fC = 2 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 250 kHz Ucc = 5,0 V
Min – – – – – – – – – – – – – – –
1000000
Max 100 200 400
5 5 5 250 500 1000 1,0 1,0 1,0 1,0 1,0 1,0 –
TA, °С 25 ± 10; -40; 85
25 ± 10
Notes 1.tPUR & tPUW times are delays from of power up to operation started 2. UCS, UORG – .