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IRF7341QPbF

International Rectifier
Part Number IRF7341QPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 28, 2015
Detailed Description Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperatur...
Datasheet PDF File IRF7341QPbF PDF File

IRF7341QPbF
IRF7341QPbF

Overview
Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The 175°C rating for the SO-8 package provides improved thermal perfor...


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