IRF7307QPBF

IRF7307QPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dual N and P Channel MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch l Surface Mount G1 2 7 D1 l Available in Tape & Reel l 150°C Operating Temperature S2 3 6 D2 VDSS 20V -20V l Lead-Free G2 4 5 D2 P-CHANNEL MOSFET Description Top View RDS(on) 0.050Ω 0.090Ω These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This SO-8 dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Base Part Number IRF7307QPbF IRF7307QPbF Package Type SO-8 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7307QPbF IRF7307QTRPbF EOL Notice EOL 529 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Cu...