IRF7303QPBF

l Advanced Process Technology l Ultra Low On-Resistance l Dual N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. PD - 96103A IRF7303QPbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = 30V S2 3 G2 4 6 D2 5 D2 RDS(on) = 0.050Ω Top View SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec. Pulsed Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient„ www.irf.com Max. 5.3 4.9 3.9 20 2.0...