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IRF7103QPbF Dataheets PDF



Part Number IRF7103QPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7103QPbF DatasheetIRF7103QPbF Datasheet (PDF)

PD - 96101C IRF7103QPbF Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive.

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