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80N60B

Part Number	80N60B
Manufacturer	IXYS
Description	High Current IGBT
Published	Dec 27, 2015
Detailed Description	High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Sym...
Datasheet	80N60B PDF File

Overview

High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.
5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 600 V 600 V ±20 V ±30 V T C = 25°C TC = 90°C T C = 90°C TC = 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 0.
6 VCES, TJ = 125°C R G = 5 Ω, non-repetitive TC = 25°C 1.
6 mm (0.
063 in.
) from case...

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