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QM12N65P

UBIQ

N-Ch 650V Fast Switching MOSFETs

QM12N65P 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM12N65P is the highest perfo...


UBIQ

QM12N65P

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Description
QM12N65P 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM12N65P is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter and lighting applications . The QM12N65P meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 0.8Ω ID 12A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter TO220 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range G DS Rating 650 ±30 12 7.6 36 90 8 219 -55 to 150 -55 to 150 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 Typ. ----- Max. 62 0.57 Units V V A A A mJ A W ℃ ℃ Unit ℃/W ℃/W Rev A.02 D022311 1 QM12N65P 2 2011-03-03 - 2 - N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) ...




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