Document
QM12N65F
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2011-03-03 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM12N65F is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter and lighting applications . The QM12N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 650V
RDSON 0.8Ω
ID 12A
Applications
z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S GD
Rating 650 ±30 12 7 36 90 8 40
-55 to 150 -55 to 150
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ. -----
Max. 62 3
Units V V A A A mJ A W ℃ ℃
Unit ℃/W ℃/W
Rev A.02 D022311
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QM12N65F
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2011-03-03 - 2 -
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
Gate Threshold Voltage VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
gfs Forward Transconductance
Rg Gate Resistance
Qg Total Gate Charge (10V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Td(on)
Turn-On Delay Time
Tr Rise Time
Td(off)
Turn-Off Delay Time
Tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=3.5A VGS=VDS , ID =250uA VDS=520V , VGS=0V , TJ=25℃ VGS=±30V , VDS=0V VDS=15V , ID=6A VDS=0V , VGS=0V , f=1MHz
VDS=520V , VGS=10V , ID=1A
VDD=300V , VGS=10V , RG=10Ω, ID=1A
VDS=25V , VGS=0V , F=1MHz
Min. 650 -----
2 -------------------------------
Typ. --0.4 0.65 ---45 ----10 3.2 44 12 12.7 24 20 74 44
2402 128 2.6
Max. ----0.8 5 --2
±100 --6.4 ---------------------
Unit V
V/℃ Ω V
mV/℃ uA nA S Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
Conditions VDD=50V , L=1mH , IAS=4A
Min. 23
Typ. ---
Max. ---
Unit mJ
Diode Characteristics
Symbol IS ISM VSD trr Qrr
Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
IF=1A , dI/dt=100A/µs , TJ=25℃
Min. -----------
Typ. ------160 765
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max. 12 36 1 -----
Unit A A V nS nC
2
Typical Characteristics
12
9 VGS=10V VGS=8V VGS=7V
6 VGS=6V
3
ID , Drain Current (A)
3 VGS=5V
0
0 VD2S , Drain-to-S4ource Voltage6(V)
Fig.1 Typical Output Characteristics
12
TJ=150℃
TJ=25℃
9
8
IS(A)
6
3
0 0 0.3 0.6 0.9
VSD , Source-to-Drain Voltage (V)
1.2
Fig.3 Forward Characteristics of Reverse
1.8
1.4
Normalized VGS(th)
1
0.6
0.2 -50
0 50 100
TJ ,Junction Temperature (℃)
Fig.5 VGS(th) vs. TJ
150
Normalized On Resistance
RDSON (mΩ)
QM12N65F
2011-03-03 - 3 -
N-Ch 650V Fast Switching MOSFETs
1
ID=3.5A
0.9
0.8
0.7
0.6 2
46
VGS (V)
8
10
Fig.2 On-Resistance vs. G-S Voltage
Fig.4 Gate-Charge Characteristics
3.0
2.3
1.6
0.9
0.2 -50
0 50 100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
150
4
10000 1000
F=1.0MHz Ciss
Capacitance(pF)
100 Coss
10 Crss
1 1 5 9 13 17 21
VDS Drain to Source Voltage(V)
Fig.7 Capacitance
1
DUTY=0.5
25
ID (A)
QM12N65F
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N-Ch 650V Fast Switching MOSFETs
100
10
100us
1ms
1
10ms 100ms
DC
0.1
0.1
1
10
100
1000
10000
VDS (V)
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
0.2
0.1
0.1
0.05 0.02 0.01
SINGLE PULSE
0.01 0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
PDM
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.1 1
Fig.9 Normalized Maximum Transient Thermal Impedance
10
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform 4
.