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QM12N65F Dataheets PDF



Part Number QM12N65F
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 650V Fast Switching MOSFETs
Datasheet QM12N65F DatasheetQM12N65F Datasheet (PDF)

QM12N65F 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM12N65F is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter and lighting applications . The QM12N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guarante.

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QM12N65F 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM12N65F is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter and lighting applications . The QM12N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 0.8Ω ID 12A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter TO220F Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range S GD Rating 650 ±30 12 7 36 90 8 40 -55 to 150 -55 to 150 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 Typ. ----- Max. 62 3 Units V V A A A mJ A W ℃ ℃ Unit ℃/W ℃/W Rev A.02 D022311 1 QM12N65F 2 2011-03-03 - 2 - N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Rg Gate Resistance Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time Td(off) Turn-Off Delay Time Tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=3.5A VGS=VDS , ID =250uA VDS=520V , VGS=0V , TJ=25℃ VGS=±30V , VDS=0V VDS=15V , ID=6A VDS=0V , VGS=0V , f=1MHz VDS=520V , VGS=10V , ID=1A VDD=300V , VGS=10V , RG=10Ω, ID=1A VDS=25V , VGS=0V , F=1MHz Min. 650 ----- 2 ------------------------------- Typ. --0.4 0.65 ---45 ----10 3.2 44 12 12.7 24 20 74 44 2402 128 2.6 Max. ----0.8 5 --2 ±100 --6.4 --------------------- Unit V V/℃ Ω V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Conditions VDD=50V , L=1mH , IAS=4A Min. 23 Typ. --- Max. --- Unit mJ Diode Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A , dI/dt=100A/µs , TJ=25℃ Min. ----------- Typ. ------160 765 Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Max. 12 36 1 ----- Unit A A V nS nC 2 Typical Characteristics 12 9 VGS=10V VGS=8V VGS=7V 6 VGS=6V 3 ID , Drain Current (A) 3 VGS=5V 0 0 VD2S , Drain-to-S4ource Voltage6(V) Fig.1 Typical Output Characteristics 12 TJ=150℃ TJ=25℃ 9 8 IS(A) 6 3 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 1.2 Fig.3 Forward Characteristics of Reverse 1.8 1.4 Normalized VGS(th) 1 0.6 0.2 -50 0 50 100 TJ ,Junction Temperature (℃) Fig.5 VGS(th) vs. TJ 150 Normalized On Resistance RDSON (mΩ) QM12N65F 2011-03-03 - 3 - N-Ch 650V Fast Switching MOSFETs 1 ID=3.5A 0.9 0.8 0.7 0.6 2 46 VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage Fig.4 Gate-Charge Characteristics 3.0 2.3 1.6 0.9 0.2 -50 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 4 10000 1000 F=1.0MHz Ciss Capacitance(pF) 100 Coss 10 Crss 1 1 5 9 13 17 21 VDS Drain to Source Voltage(V) Fig.7 Capacitance 1 DUTY=0.5 25 ID (A) QM12N65F 2011-03-03 - 4 - N-Ch 650V Fast Switching MOSFETs 100 10 100us 1ms 1 10ms 100ms DC 0.1 0.1 1 10 100 1000 10000 VDS (V) Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 t , Pulse Width (s) PDM TON T D = TON/T TJpeak = TC + PDM x RθJC 0.1 1 Fig.9 Normalized Maximum Transient Thermal Impedance 10 Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4 .


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