QM02N65U

QM02N65U 1 2010-04-27 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM02N65U is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM02N65U meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 8Ω ID 2A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LED Lighting z Adapter/charger TO251 Pin Configuration Absolute Maximum Ratings G DS Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 650 ±30 2 1.3 4 16 3.4 40 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 Typ. ----- Max. 62 3 Unit ℃/W ℃/W Rev A.01 D102209 1 QM02N65U 2 2010-04-27 - 2 - N-Ch 650V Fast Switching MOSFETs Electrical Characteristic...