Si5858DU
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) 20
RDS(on) (...
Si5858DU
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with
Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V
ID (A)a 6 6 6
Qg (Typ.) 6 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
VF (V) Diode Forward Voltage
20 0.375 at 1 A
IF (A)a 1
PowerPAK ChipFET Dual
FEATURES
Halogen-free LITTLE FOOT® Plus Power MOSFET New Thermally Enhanced PowerPAK®
ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile
APPLICATIONS
Load Switch for Portable Applications - Ideal for Boost Circuits
1
A2
K 8
K 7
A
D 6
D 5
3 S4
G
1.9 mm
Marking Code
JB XXX Lot Traceability and Date Code
Part # Code
DK G
RoHS
COMPLIANT
Bottom View Ordering Information: Si5858DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
SA N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET) Reverse Voltage (
Schottky) Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (
Schottky) Pulsed Forward Current (
Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (
Schottky)
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °...