Si5857DU

Si5857DU Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.058 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A)a 6 6 Qg (Typ.) 5.5 nC SCHOTTKY PRODUCT SUMMARY VKA (V) 20 VF (V) Diode Forward Voltage 0.375 at 1 A IF (A)a 2 PowerPAK® ChipFET® Dual 1 A 2 Marking Code JA XXX Lot Traceability and Date Code K A3 Part # Code 8K S4 3.07mm 6 D D G 5 1.8 mm FEATURES Halogen-free According to IEC 61249-2-21 Definition LITTLE FOOT® Plus Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile Compliant to RoHS Directive 2002/95/EC APPLICATIONS Charging Switch for Portable Devices - With Integrated Low VF Trench Schottky Diode SK G Bottom View Ordering Information: Si5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 2...