Si4688DY

New Product N-Channel 30-V (D-S) MOSFET Si4688DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.011 at VGS = 10 V 0.0145 at VGS = 4.5 V ID (A) 12 9.8 S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4688DY-T1-E3 (Lead (Pb)-free) Si4688DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook PC - Core - System Power D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 12 8.9 9.5 7.1 Pulsed Drain Current IDM 40 Continuous Source Current (Diode Conduction)a IS 2.3 1.3 Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS 20 20 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.5 1.6 1.4 0.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Document Number: 69996 S09-0394-Rev. B, 09-Mar-09 Typical 43 73 19 Maximum 50 90 25 Unit °C/W www.vishay.com 1 Si4688DY Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted...