Si5980DU

Si5980DU Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.567 at VGS = 10 V ID (A) 2.5 Qg (Typ.) 2.2 nC PowerPAK® ChipFET Dual 1 S1 2 D1 8 D1 7 6 G1 D2 D2 5 3 S2 4 G2 Marking Code CE XXX Lot Traceability and Date Code Part # Code FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile Compliant to RoHS Directive 2002/95/EC APPLICATIONS D1 D2 Load Supply Power Supply G1 G2 Bottom View Ordering Information: Si5980DU-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VGS ID IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C IS IAS EAS Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 100 ± 20 2.5 2.0 1.3b, c 1.0b, c 3 6a 1.7b, c 2 0.2 7.8 5.0 2.0b, c 1.3b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Amb...