SiA427ADJ

New Product P-Channel 8 V (D-S) MOSFET SiA427ADJ Vishay Siliconix PRODUCT SUMMARY VDS (V) -8 RDS(on) () (Max.) 0.016 at VGS = - 4.5 V 0.0215 at VGS = - 2.5 V 0.026 at VGS = - 1.8 V 0.032 at VGS = - 1.5 V 0.095 at VGS = - 1.2 V ID (A) - 12a - 12a - 12a - 12a -3 Qg (Typ.) 30 nC PowerPAK SC-70-6L-Single FEATURES TrenchFET® Power MOSFET Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D 6 D 5 2.05 mm S 4 1 D 2 D 3 G S 2.05 mm Ordering Information: SiA427ADJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA427ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Load Switch, for 1.2 V Power Line for Portable and Handheld Devices S Marking Code Part # code BTX XXX Lot Traceability and Date code G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg -8 ±5 - 12a - 12a - 12a, b, c - 9.9b, c - 50 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150...