SiB412DK

New Product N-Channel 20-V (D-S) MOSFET SiB412DK Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.034 at VGS = 4.5 V 20 0.040 at VGS = 2.5 V 0.054 at VGS = 1.8 V PowerPAK SC-75-6L-Single D 6 D 5 1.60 mm S 4 1 D 2 D 3 G S 1.60 mm ID (A) 9a 9a 9a Qg (Typ.) 6.14 nC FEATURES Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices DC/DC Converter D Marking Code Part # code AAX XXX Lot Traceability and Date code Ordering Information: SiB412DK-T1-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg Limit 20 ±8 9a 9a 6.6b, c 5.29b, c 20 9a 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State RthJA RthJC 41 7.5 51 °C/W 9.5 No...