SiB411DK

P-Channel 20-V (D-S) MOSFET SiB411DK Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.066 at VGS = - 4.5 V - 20 0.094 at VGS = - 2.5 V 0.130 at VGS = - 1.8 V PowerPAK SC-75-6L-Single D 6 D 5 1.60 mm S 4 1 D 2 D 3 G S 1.60 mm ID (A) - 9a - 9a - 9a Qg (Typ.) 6 nC FEATURES Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices S Marking Code Part # code BBX XXX Lot Traceability and Date code Ordering Information: SiB411DK-T1-GE3 (Lead (Pb)-free and Halogen-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg Limit - 20 ±8 - 9a - 8.9a - 4.8b, c - 3.8b, c - 15 - 9a - 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State RthJA RthJC 41 7.5 51 °C/W 9.5 Notes: a. Package li...