Document
N-Channel 40-V (D-S) MOSFET
Si7848DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.009 at VGS = 10 V 40
0.012 at VGS = 4.5 V
ID (A) 17 15
PowerPAK SO-8
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View
Ordering Information: Si7848DP-T1 Si7848DP-T1—E3 (Lead (Pb)-free)
FEATURES • TrenchFET® Power MOSFETS • New Low Thermal Resistance
PowerPAK® Package with Low 1.07-mm Profile • PWM Optimized for Fast Switching • 100 % Rg Tested
APPLICATIONS • DC/DC Converters
- Synchronous Buck - Synchronous Rectifier
D
Pb-free Available
RoHS*
COMPLIANT
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a
TA = 25 °C TA = 70 °C
L = 0.1 mH
VDS VGS
ID
IDM IAS IS
17 13.7
4.5
40 ± 20
50 30
10.4 8.3
1.67
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c
TA = 25 °C TA = 70 °C
PD TJ, Tstg
5 1.83 3.2 1.2
– 55 to 150 260
Unit V A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 sec Steady State
RthJA
20 55
25 68 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.8
2.2
Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71450 S-52554-Rev. D, 19-Dec-05
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Si7848DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 14 A
Diode Forward Voltagea
VSD IS = 2.8 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 20 V, VGS = 5 V, ID = 14 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = 20 V, RL = 20 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.8 A, di/dt = 100 A/µs
Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
1.0 3.0 ± 100 1 5
50 0.0075 0.009 0.0095 0.012 50 0.75 1.1
V nA
µA A
Ω S V
18.5 28 6 7.5
0.1 0.8 1.1 15 30 10 20 50 100 20 40 30 60
nC Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
I D - Drain Current (A) I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless noted
50 VGS = 10 thru 4 V
40
30 3V
20
10 2 thru 0 V
0 0123456 VDS - Drain-to-Source Voltage (V) Output Characteristics
50
40
30
20
10
0 0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
4.0
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Document Number: 71450 S-52554-Rev. D, 19-Dec-05
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.020
rDS(on) - On-Resistance ( Ω )
0.016
0.012 0.008
VGS = 4.5 V VGS = 10 V
0.004
0.000 0
10 20 30 40
ID - Drain Current (A) On-Resistance vs. Drain Current
10
VDS = 20 V ID = 14 A 8
50
V GS - Gate-to-Source Voltage (V)
6
4
2
0 0
50
7 14 21 28
Qg - Total Gate Charge (nC) Gate Charge
35
TJ = 150 °C
10
TJ = 25 °C
I S - Source Current (A)
1 0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage
1.2
Document Number: 71450 S-52554-Rev. D, 19-Dec-05
rDS(on) - On-Resistance ( Ω )
rDS(on) - On-Resistance (Normalized)
C - Capacitance (pF)
Si7848DP
Vishay Siliconix
3000
2500 2000
Ciss
1500
1000
500
0 0
Crss
Coss
8 16 24 32
VDS - Drain-to-Source Voltage (V) Capacitance
2.0
VGS = 10 V ID = 14 A 1.6
40
1.2
0.8
0.4
0.0 - 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C) On-Resistance vs. Junction .