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Si7848DP Dataheets PDF



Part Number Si7848DP
Manufacturers Vishay
Logo Vishay
Description N-channel MOSFET
Datasheet Si7848DP DatasheetSi7848DP Datasheet (PDF)

N-Channel 40-V (D-S) MOSFET Si7848DP Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.009 at VGS = 10 V 40 0.012 at VGS = 4.5 V ID (A) 17 15 PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7848DP-T1 Si7848DP-T1—E3 (Lead (Pb)-free) FEATURES • TrenchFET® Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile • PWM Optimized for Fast Switching • 100 % Rg Tested APPLICATIONS • DC/DC Converters - Synch.

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N-Channel 40-V (D-S) MOSFET Si7848DP Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.009 at VGS = 10 V 40 0.012 at VGS = 4.5 V ID (A) 17 15 PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7848DP-T1 Si7848DP-T1—E3 (Lead (Pb)-free) FEATURES • TrenchFET® Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile • PWM Optimized for Fast Switching • 100 % Rg Tested APPLICATIONS • DC/DC Converters - Synchronous Buck - Synchronous Rectifier D Pb-free Available RoHS* COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C L = 0.1 mH VDS VGS ID IDM IAS IS 17 13.7 4.5 40 ± 20 50 30 10.4 8.3 1.67 Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25 °C TA = 70 °C PD TJ, Tstg 5 1.83 3.2 1.2 – 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 sec Steady State RthJA 20 55 25 68 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.8 2.2 Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71450 S-52554-Rev. D, 19-Dec-05 www.vishay.com 1 Si7848DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A Forward Transconductancea gfs VDS = 15 V, ID = 14 A Diode Forward Voltagea VSD IS = 2.8 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 20 V, VGS = 5 V, ID = 14 A Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = 20 V, RL = 20 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.8 A, di/dt = 100 A/µs Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Min Typ Max Unit 1.0 3.0 ± 100 1 5 50 0.0075 0.009 0.0095 0.012 50 0.75 1.1 V nA µA A Ω S V 18.5 28 6 7.5 0.1 0.8 1.1 15 30 10 20 50 100 20 40 30 60 nC Ω ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. I D - Drain Current (A) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless noted 50 VGS = 10 thru 4 V 40 30 3V 20 10 2 thru 0 V 0 0123456 VDS - Drain-to-Source Voltage (V) Output Characteristics 50 40 30 20 10 0 0.0 TC = 125 °C 25 °C - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 4.0 www.vishay.com 2 Document Number: 71450 S-52554-Rev. D, 19-Dec-05 TYPICAL CHARACTERISTICS 25 °C, unless noted 0.020 rDS(on) - On-Resistance ( Ω ) 0.016 0.012 0.008 VGS = 4.5 V VGS = 10 V 0.004 0.000 0 10 20 30 40 ID - Drain Current (A) On-Resistance vs. Drain Current 10 VDS = 20 V ID = 14 A 8 50 V GS - Gate-to-Source Voltage (V) 6 4 2 0 0 50 7 14 21 28 Qg - Total Gate Charge (nC) Gate Charge 35 TJ = 150 °C 10 TJ = 25 °C I S - Source Current (A) 1 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.2 Document Number: 71450 S-52554-Rev. D, 19-Dec-05 rDS(on) - On-Resistance ( Ω ) rDS(on) - On-Resistance (Normalized) C - Capacitance (pF) Si7848DP Vishay Siliconix 3000 2500 2000 Ciss 1500 1000 500 0 0 Crss Coss 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance 2.0 VGS = 10 V ID = 14 A 1.6 40 1.2 0.8 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction .


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