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QM2N7002E3K1 Dataheets PDF



Part Number QM2N7002E3K1
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 60V Fast Switching MOSFETs
Datasheet QM2N7002E3K1 DatasheetQM2N7002E3K1 Datasheet (PDF)

QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs General Description The QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2N7002E3K1 meet the RoHS and Green Product requirement with full function reliability approved. Features z High-speed switching z Green Device Available z ESD Protected:2KV Product Summery BVDSS 60V RDSON 3Ω ID 18.

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QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs General Description The QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2N7002E3K1 meet the RoHS and Green Product requirement with full function reliability approved. Features z High-speed switching z Green Device Available z ESD Protected:2KV Product Summery BVDSS 60V RDSON 3Ω ID 180mA Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC z Networking DC-DC Power System z Load Switch SOT23S Pin Configuration D G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range S Rating 60 ±20 180 150 1.2 0.2 -55 to 150 -55 to 150 Units V V mA mA A W ℃ ℃ Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-Ambient 1 Typ. --- Max. 625 Unit ℃/W Rev A.01 D091311 1 QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=0.5A VGS=4.5V , ID=0.2A VGS=VDS , ID =250uA VDS=60V , VGS=0V , TJ=25℃ VDS=60V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=0.3A VDD=30V , VGS=10V , RG=3.3Ω, ID=0.5A VDS=25V , VGS=0V , f=1MHz Min. 60 ------1 ------------------------- Typ. --0.05 0.8 1 ---3.7 ------940 3 1.8 8 6.8 40 12 7.6 Max. ----3 4 2.5 --1 5 ±10 --6 3.3 16 13.6 56 17 10.6 Unit V V/℃ Ω V mV/℃ uA uA mS ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Min. ------- Typ. ------- Max. 180 1.2 1 Unit mA A V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Typical Characteristics QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characte.


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