Document
QM2N7002E3K1
N-Ch 60V Fast Switching MOSFETs
General Description
The QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2N7002E3K1 meet the RoHS and Green Product requirement with full function reliability approved.
Features
z High-speed switching z Green Device Available z ESD Protected:2KV
Product Summery
BVDSS 60V
RDSON 3Ω
ID 180mA
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC
z Networking DC-DC Power System z Load Switch
SOT23S Pin Configuration
D
G
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
S
Rating 60 ±20 180 150 1.2 0.2
-55 to 150 -55 to 150
Units V V mA mA A W ℃ ℃
Thermal Data
Symbol RθJA
Parameter Thermal Resistance Junction-Ambient 1
Typ. ---
Max. 625
Unit ℃/W
Rev A.01 D091311
1
QM2N7002E3K1
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
Gate Threshold Voltage VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS gfs Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=0.5A VGS=4.5V , ID=0.2A
VGS=VDS , ID =250uA
VDS=60V , VGS=0V , TJ=25℃ VDS=60V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=0.3A
VDD=30V , VGS=10V , RG=3.3Ω, ID=0.5A
VDS=25V , VGS=0V , f=1MHz
Min. 60 ------1 -------------------------
Typ. --0.05 0.8 1 ---3.7 ------940 3 1.8 8 6.8 40 12 7.6
Max. ----3 4 2.5 --1 5
±10 --6 3.3 16 13.6 56 17 10.6
Unit V
V/℃ Ω V
mV/℃ uA uA mS
ns
pF
Diode Characteristics
Symbol IS ISM VSD
Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
Min. -------
Typ. -------
Max. 180 1.2
1
Unit mA A V
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Typical Characteristics
QM2N7002E3K1
N-Ch 60V Fast Switching MOSFETs
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source Voltage
Fig.3 Forward Characte.