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QM3301S

UBIQ

N-Ch and P-Ch Fast Switching MOSFETs

QM3301S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM3301S is the highest performance trench N-ch and...


UBIQ

QM3301S

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Description
QM3301S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM3301S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3301S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V -30V RDSON 20mΩ 45mΩ ID 10A 6A Applications z Power management in half bridge and inverters z DC-DC Converter z Load Switch SOP8 Pin Configuration D1 D1D2D2 S1 G1 S2 G2 Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating N-Channel P-Channel 30 ±20 -30 ±20 10 -6 6 -4 20 -12 72 59 21 -19 2.5 2.08 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 85 50 Unit ℃/W ℃/W Rev A.01 D092209 1 QM3301S N-Ch and P-Ch Fast Swi...




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