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QM2604V Dataheets PDF



Part Number QM2604V
Manufacturers UBIQ
Logo UBIQ
Description N-Ch and P-Ch 20V Fast Switching MOSFETs
Datasheet QM2604V DatasheetQM2604V Datasheet (PDF)

QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETs General Description The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2604V meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Gr.

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QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETs General Description The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2604V meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 50mΩ 155 mΩ ID 3.8A -2.3A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TSOP6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC \ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 1 Rating N-Channel P-Channel 20 20 ±12 ±12 3.8 -2.3 3 -1.8 15.2 -9.2 1.1 1.1 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ. ----- Max. 110 70 Unit ℃/W ℃/W Rev A.02 D041411 QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=4.5V , ID=4A VGS=2.5V , ID=2A VGS=VDS , ID =250uA VDS=16V , VGS=0V , TJ=25℃ VDS=16V , VGS=0V , TJ=55℃ VGS=±12V , VDS=0V VDS=5V , ID=3A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=3A VDD=10V , VGS=4.5V , RG=3.3Ω ID=3A VDS=15V , VGS=0V , f=1MHz Min. 20 ------0.5 ------------------0.7 20 6.2 2.8 ------- Typ. --- 0.015 42 55 0.8 -2.86 ------10.5 1.9 4.7 0.68 1.3 1.4 40 12.4 5.6 296 44 35 Max. ----50 65 1.2 --1 5 ±100 --3.8 6.6 0.96 1.8 2.8 72 25 11 414 62 49 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Diode Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=3A , dI/dt=100A/µs , TJ=25℃ Min. ----------- Typ. ------8.9 1.7 Max. 3.8 15.2 1.2 ----- Unit A A V nS nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 N-Channel Typical Characteristics QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETs IS Source Current(A) Fig.1 Typical Output Characteristics 5 4 3 2 TJ=150℃ TJ=25℃ 1 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 1.2 Fig.3 Forward Characteristics Of Reverse 1.8 1.4 1 0.6 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 150 Normalized On Resistance Fig.2 On-Resistance vs. Gate-Source Fig.4 Gate-Charge Characteristics 1.8 1.4 1.0 0.6 0.2 -50 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 Normalized VGS(th) Capacitance (pF) QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETs 1000 F=1.0MHz Ciss 100 Coss Crss 10 1 5 9 13 17 VDS , Drain to Source Voltage (V) Fig.7 Capacitance 1 DUTY=0.5 21 Fig.8 Safe Operating Area 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE 0.001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM T ON T D = TON/T TJpeak = TC+PDMXRθJC 10 100 Fig.9 Normalized Maximum Transient Thermal Impedance 1000 Normalized Thermal Response (RθJA) Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate.


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