Document
QM2604V
N-Ch and P-Ch 20V Fast Switching MOSFETs
General Description The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2604V meet the RoHS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 20V -20V
RDSON 50mΩ 155 mΩ
ID 3.8A -2.3A
Applications
z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
TSOP6 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TC=25℃
TSTG TJ
Thermal Data
Symbol RθJA RθJC
\
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
1
Rating
N-Channel P-Channel
20 20
±12
±12
3.8 -2.3
3 -1.8
15.2 -9.2
1.1 1.1
-55 to 150 -55 to 150
-55 to 150 -55 to 150
Units
V V A A A W ℃ ℃
Typ. -----
Max. 110 70
Unit ℃/W ℃/W
Rev A.02 D041411
QM2604V
N-Ch and P-Ch 20V Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
Gate Threshold Voltage VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=4.5V , ID=4A VGS=2.5V , ID=2A VGS=VDS , ID =250uA VDS=16V , VGS=0V , TJ=25℃ VDS=16V , VGS=0V , TJ=55℃ VGS=±12V , VDS=0V VDS=5V , ID=3A VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=3A
VDD=10V , VGS=4.5V , RG=3.3Ω ID=3A
VDS=15V , VGS=0V , f=1MHz
Min. 20 ------0.5 ------------------0.7 20 6.2 2.8 -------
Typ. ---
0.015 42 55 0.8
-2.86 ------10.5 1.9 4.7 0.68 1.3 1.4 40 12.4 5.6 296 44 35
Max. ----50 65 1.2 --1 5
±100 --3.8
6.6 0.96 1.8 2.8 72 25 11 414 62 49
Unit V
V/℃ mΩ V mV/℃ uA nA S Ω
nC
ns
pF
Diode Characteristics
Symbol IS ISM VSD trr Qrr
Parameter Continuous Source Current1,4 Pulsed Source Current2,4 Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
IF=3A , dI/dt=100A/µs , TJ=25℃
Min. -----------
Typ. ------8.9 1.7
Max. 3.8 15.2 1.2 -----
Unit A A V nS nC
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
N-Channel Typical Characteristics
QM2604V
N-Ch and P-Ch 20V Fast Switching MOSFETs
IS Source Current(A)
Fig.1 Typical Output Characteristics
5
4
3
2
TJ=150℃
TJ=25℃
1
0
0 0.3 0.6 0.9
VSD , Source-to-Drain Voltage (V)
1.2
Fig.3 Forward Characteristics Of Reverse
1.8
1.4
1
0.6
0.2 -50
0 50 100
TJ ,Junction Temperature (℃ )
Fig.5 Normalized VGS(th) vs. TJ
150
Normalized On Resistance
Fig.2 On-Resistance vs. Gate-Source
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2 -50
0 50 100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
150
Normalized VGS(th)
Capacitance (pF)
QM2604V
N-Ch and P-Ch 20V Fast Switching MOSFETs
1000
F=1.0MHz Ciss
100
Coss
Crss
10 1 5 9 13 17
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
1 DUTY=0.5
21
Fig.8 Safe Operating Area
0.2
0.1 0.1 0.05
0.02 0.01 0.01 SINGLE
0.001 0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
PDM
T ON
T
D = TON/T TJpeak = TC+PDMXRθJC
10 100
Fig.9 Normalized Maximum Transient Thermal Impedance
1000
Normalized Thermal Response (RθJA)
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform 4
QM2604V
N-Ch and P-Ch 20V Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
Gate Threshold Voltage VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate.