Document
QM6004P
N-Ch 60V Fast Switching MOSFETs
General Description
The QM6004P is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6004P meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 60V
RDSON 30mΩ
ID 35A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter.
z Networking DC-DC Power System z Load Switch
TO220 Pin Configuration
Absolute Maximum Ratings
S GD
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating 60 ±20 35 26 70 34.5 22.6 58
-55 to 150 -55 to 150
Units V V A A A mJ A W ℃ ℃
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ. -----
Max. 62 2.16
Unit ℃/W ℃/W
Rev A.01 D010710
1
QM6004P
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
IDSS
Gate Threshold Voltage VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=12A VGS=4.5V , ID=10A VGS=VDS , ID =250uA VDS=48V , VGS=0V , TJ=25℃ VDS=48V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=12A VDS=0V , VGS=0V , f=1MHz
VDS=48V , VGS=4.5V , ID=10A
VDD=30V , VGS=10V , RG=3.3Ω, ID=10A
VDS=15V , VGS=0V , f=1MHz
Min. 60 ------1.2 ---------------------------------
Typ. ---
0.063 25 30 ---
-5.24 ------17 3.2
12.56 3.24 6.31
8 14.2 24.4 4.6 1378 86 64
Max. ----30 38 2.5 --1 5
±100 --6.4 ---------------------
Unit V
V/℃ mΩ V mV/℃ uA nA S Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
Conditions VDD=25V , L=0.1mH , IAS=15A
Min. 15.2
Typ. ---
Max. ---
Unit mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6 ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2
VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
-------
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22.6A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ. -------
Max. 35 70 1.2
Unit A A V
2
ID Drain Current (A)
Typical Characteristics
12
10 VGS=10V VGS=7
8 VGS=5V VGS=4.5V
6
VGS=3V
4
2
0
0 VD0S.5, Drain-to-S1ource Voltag1e.5(V)
Fig.1 Typical Output Characteristics
12
2
10
IS Source Current(A)
8
6
TJ=150℃
4
TJ=25℃
2
0
0.2 0.4 0.6 0.8
VSD , Source-to-Drain Voltage (V)
1
Fig.3 Forward Characteristics of Reverse
1.5
VGS Gate to Source Voltage (V)
RDSON (mΩ)
QM6004P
N-Ch 60V Fast Switching MOSFETs
35
ID=12A
33
30
28
25 2
4
VG6S (V)
8
10
Fig.2 On-Resistance v.s Gate-Source
10
ID=12A
8
6
4
2
0 0 5 10 15 20 25
QG , Total Gate Charge (nC)
Fig.4 Gate-Charge Characteristics
2.5
Normalized On Resistance
Normalized VGS(th)
2.0 1
1.5
0.5 1.0
0
-50 TJ ,J0unction Tem5p0erature (℃)100
Fig.5 Normalized VGS(th) v.s TJ
150
0.5 -50
0 50 100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON v.s TJ
150
3
Capacitance (pF)
QM6004P
10000 1000
F=1.0MHz Ciss
100 Coss Crss
10 1
5 VDS Dr9ain to So1u3rce Volt1a7ge(V) 21
Fig.7 Capacitance
1
25
ID (A)
N-Ch 60V Fast Switching MOSFETs
100
10us 100us
10
10ms 100ms 1 DC
0 0.1
TC=25℃ Single Pulse
1
VDS (V)
10
Fig.8 Safe Operating Area
100
Normalized Thermal Response (RθJC)
DUTY=0.5
0.2
0.1 0.1
0.05 0.02 0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
PDM
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.1 1
Fig.9 Normalized Maximum Transient Thermal Impedance
10
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform 4
.