DatasheetsPDF.com

QM6004P Dataheets PDF



Part Number QM6004P
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 60V Fast Switching MOSFETs
Datasheet QM6004P DatasheetQM6004P Datasheet (PDF)

QM6004P N-Ch 60V Fast Switching MOSFETs General Description The QM6004P is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6004P meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS.

  QM6004P   QM6004P


Document
QM6004P N-Ch 60V Fast Switching MOSFETs General Description The QM6004P is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6004P meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 60V RDSON 30mΩ ID 35A Applications z High Frequency Point-of-Load Synchronous Buck Converter. z Networking DC-DC Power System z Load Switch TO220 Pin Configuration Absolute Maximum Ratings S GD Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 60 ±20 35 26 70 34.5 22.6 58 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 62 2.16 Unit ℃/W ℃/W Rev A.01 D010710 1 QM6004P N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=12A VGS=4.5V , ID=10A VGS=VDS , ID =250uA VDS=48V , VGS=0V , TJ=25℃ VDS=48V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=12A VDS=0V , VGS=0V , f=1MHz VDS=48V , VGS=4.5V , ID=10A VDD=30V , VGS=10V , RG=3.3Ω, ID=10A VDS=15V , VGS=0V , f=1MHz Min. 60 ------1.2 --------------------------------- Typ. --- 0.063 25 30 --- -5.24 ------17 3.2 12.56 3.24 6.31 8 14.2 24.4 4.6 1378 86 64 Max. ----30 38 2.5 --1 5 ±100 --6.4 --------------------- Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Conditions VDD=25V , L=0.1mH , IAS=15A Min. 15.2 Typ. --- Max. --- Unit mJ Diode Characteristics Symbol Parameter Conditions Min. IS Continuous Source Current1,6 ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ ------- Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22.6A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Typ. ------- Max. 35 70 1.2 Unit A A V 2 ID Drain Current (A) Typical Characteristics 12 10 VGS=10V VGS=7 8 VGS=5V VGS=4.5V 6 VGS=3V 4 2 0 0 VD0S.5, Drain-to-S1ource Voltag1e.5(V) Fig.1 Typical Output Characteristics 12 2 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.2 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) 1 Fig.3 Forward Characteristics of Reverse 1.5 VGS Gate to Source Voltage (V) RDSON (mΩ) QM6004P N-Ch 60V Fast Switching MOSFETs 35 ID=12A 33 30 28 25 2 4 VG6S (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 10 ID=12A 8 6 4 2 0 0 5 10 15 20 25 QG , Total Gate Charge (nC) Fig.4 Gate-Charge Characteristics 2.5 Normalized On Resistance Normalized VGS(th) 2.0 1 1.5 0.5 1.0 0 -50 TJ ,J0unction Tem5p0erature (℃)100 Fig.5 Normalized VGS(th) v.s TJ 150 0.5 -50 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ 150 3 Capacitance (pF) QM6004P 10000 1000 F=1.0MHz Ciss 100 Coss Crss 10 1 5 VDS Dr9ain to So1u3rce Volt1a7ge(V) 21 Fig.7 Capacitance 1 25 ID (A) N-Ch 60V Fast Switching MOSFETs 100 10us 100us 10 10ms 100ms 1 DC 0 0.1 TC=25℃ Single Pulse 1 VDS (V) 10 Fig.8 Safe Operating Area 100 Normalized Thermal Response (RθJC) DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 t , Pulse Width (s) PDM TON T D = TON/T TJpeak = TC + PDM x RθJC 0.1 1 Fig.9 Normalized Maximum Transient Thermal Impedance 10 Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 4 .


QM6004F QM6004P QM6004S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)