QM3807M6

General Description The QM3807M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3807M6 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available QM3807M6 Dual N-Ch Fast Switching MOSFETs Product Summery BVDSS 30V 30V RDSON 9mΩ 4mΩ ID 57A 83A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter PRPAK5X6 Pin Configuration S2 S2 S2 G2 S1/D2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 1 D1D1D1 G1 Rating Die1 Die2 30 30 ±20 ±20 57 83 36 52 12 17.3 9.6 14 130 170...