K982

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Analog Switch Applications Interface Applications 2SK982 Unit: mm Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) @ID = 50 mA Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA Enhancement-mode Complementary to 2SJ148 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg 60 ±20 200 800 400 150 −55~150 V V mA mW °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1H Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdow...