IXFX50N50

HiPerFETTM Power MOSFETs Single Die MOSFET IXFX 50N50 IXFX 55N50 VDSS ID25 500 V 50 A 500 V 55 A t rr ≤ 250 ns RDS(on) 100 mΩ 80 mΩ Preliminary data sheet Symbol V DSS VDGR V GS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque 50N50 55N50 50N50 55N50 50N50 55N50 500 V 500 V ±20 V ±30 V 50 A 55 A 200 A 220 A 50 A 55 A 60 mJ 3J 5 V/ns 520 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 1.13/10 Nm/lb.in. 6g Symbol Test Conditions V DSS V GS(th) IGSS V = 0 V, I = 1mA GS D V = V , I = 8mA DS GS D VGS = ±20 V, VDS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 V 2.5 4.5 V ±200 nA IDSS RDS(on) V DS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 TJ = 25°C TJ = 125°C 50N50 55N50 25 µA 2 mA 100 m Ω 80 m Ω PLUS 247TM (IXFX) G D D (TAB) Features l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor contro...