51N25

FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 mΩ Features RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A Low Gate Charge (Typ. 55 nC) Low Crss (Typ. 63 pF) Applications PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply August 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D DD GDS TO-220 GDS G S TO-220F G TO-220F Y-formed Absolute Maximum Ratings TC = 25°C unless otherwise noted. S Symbol Parameter FDP51N25 G TO-220F LG-formed S FDPF51N25 FDPF51N25YDTU FDPF51N25RDTU Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) (Note 3) 250 51 51* 30 30* 204 204* ± 30 1111 51 32 4.5 V A A A V mJ A mJ V/ns PD TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate Above 25°C Operating and Storage Temperature Range Maximu...