D1615

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES World Standard Miniature Package Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB1115, 2SD1115A ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A Collector to Base Voltage VCBO 60 120 V Collector to Emitter Voltage VCEO 50 60 V Emitter to Base Voltage VEBO 6 A Collector Current (DC) IC 1 A Collector Current (Pulse)* IC 2A Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature** PT 2.0 W Maximum Temperatures Junction Temperature Tj 150 ˚C Storage Temperature Range Tstg –55 to +150 ˚C * PW ≤ 10 ms, Duty Cycle ≤ 50 % ** When mounted on ceramic substrate of 16 cm2 × 0.7 mm 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 PACKAGE DIMENSIONS in millimeters 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 C EB 0.42 ±0.06 1.5 0.47 ± 0.06 3.0 0.42±0.06 0.41+– 00..0053 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance SYMBOL MIN. ICBO IEBO hFE1*** hFE2*** VCE(sat)*** VBE(sat)*** VBE*** fT Cob 135 135 81 600 80 TYP. 290 270 0.15 0.9 1...